| PART |
Description |
Maker |
| TD62S353AFM |
1-Channel Darlington Source-Current Driver
|
TOSHIBA
|
| TD62S312AFM |
1-Channel Darlington Source-Current Driver
|
TOSHIBA
|
| LB1740 |
8-Channel / Current-Source Output / Darlington Transistor Array
8-Channel Current-Source Output Darlington Transistor Array
8-Channel, Current-Source Output, Darlington Transistor Array
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| TD62S310AFM |
1-Channel Darlington Source-Current Driver
TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| IS1-2981RH/PROTO 5962R0052001VVC 5962R0052001QVC I |
8-Channel Source Driver, Rad-Hard
Radiation Hardened 8-Channel Source
Driver(抗辐通道源极驱动
Radiation Hardened 8-Channel Source Driver 8 CHANNEL, BUF OR INV BASED PRPHL DRVR, CDIP18
|
Intersil Corporation
Intersil, Corp.
|
| M54580FP |
7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric
|
| M54561P |
7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M54562WP |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
|
| M54563FP M54563P |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ULN2005 ULN2003 ULN2003L ULN2005A ULN2005L ULN2003 |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash Memory IC; Memory Size:64Mbit; Access Time, Tacc:90ns; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow
High Voltage / High Current Darlington Transistor Arrays
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
(ULN2001A - ULN2005A) High Voltage / High Current Darlington Arrays
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
List of Unclassifed Man...
Electronic Theatre Controls, Inc.
Sprague Electric
ETC[ETC]
List of Unclassifed Manufacturers
VISHAY SPRAGUE
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
